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If the diode in the circuit shown in Figure P927 is fabricated from silicon and iD Io evD VT 1 where at T 300 K kT Determine the minimum value of VS1 at and above which the diode will

If the diode in the circuit shown in Figure P9.27 is fabricated from silicon and

iIo(evD/V− 1where at = 300 K

kT

 

Determine the minimum value of VS1 at and above which the diode will conduct with a significant current.

 

 

R

 

+

 

q

 

I= 2.030 × 10−15 A        VT  =

 

v= 5.3V + 7 cost)      mV

ω = 377 rad/s        = 4.6 kQ

≈ 26 mV

 

+

_   VS1

VD  

+

_

 

 

 

VS2

 

Determine, using superposition and the offset (or threshold) voltage model for the diode, the DC or point current through the diode.

Jun 18 2020 View more View Less

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