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Heat treatment is common in processing of semiconductor material A 200 mm diameter silicon wafer with thickness of 725 µm is being heat treated in a vacuum chamber by nfrared heater The surrounding

Heat treatment is common in processing of semiconductor material. A 200-mm-diameter silicon wafer with thickness of 725 µm is being heat treated in a vacuum chamber by infrared heater. The surrounding walls of the chamber have a uniform temperature of 310 K. The infrared heater provides an incident radiation flux of 200 kW/m2 on the upper surface of the wafer, and the emissivity and absorptivity of the wafer surface are 0.70. Using a pyrometer, the lower surface temperature of the wafer is measured to be 1000 K. Assuming there is no radiation exchange between the lower surface of the wafer and the surroundings, determine the upper surface temperature of the wafer.

 

 

 

Jul 22 2020 View more View Less

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