p-n junction is forward biased, the depletion layer almost completely disappears. The elec
When a p-n junction is forward biased, the depletion layer almost completely disappears.
The electrons move and stored in p-region and holes stored in n-region.
As applied voltage increases, the amount of charge stored on both sides of junction also increases.
It is observed that the charge stored varies directly as the applied forward bias voltage.
This effect is similar to a capacitor in which amount of charge stored varies with applied voltage.
The flow of charge Q results in a diode current I is given by
= × ⋯ ⋯ (1)
Where is average life time of charge carrier
The diode current equation / − 1
The charge / − 1
Differentiating above equation with respect to V
= / ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ (2)
From diode current equation = / −
+ = / ⋯ ⋯ ⋯ (3)
Substitute equation (3) in equation (2)
= ( + )
Explain in brief about diode equivalent circuit.
Piece wise linear model: