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# A Si sample is doped with 1014 boron atoms per cm3 a What are the carrier concentrations n 1 and p in the Si sample at 300K b What are the carrier concentrations n and p at

A Si sample is doped with 1014 boron atoms per cm3. (a) What are the carrier concentrations (n 1 and p) in the Si sample at 300K? (b) What are the carrier concentrations (n and p) at 470K? 2. A Si sample is doped with 107 Arsenic atoms/cm2. What is the equilibrium hole concentration p at 300K? Where is Ef relative to Ei? 3. Calculate the intrinsic carrier concentration in silicon at T 250K and T 400K. Calculate the pos ition of the intrinsic Fermi level with respect to the center of the bandgap in silicon at T 300K Consider silicon at T 300K so that Nc 2.8 x 1019 cm and Nv= 1.04 X 10" cm3. Assume that 4. 5. the Fermi energy is 0.25eV below the conduction band. If we assume that the bandgap energy of Si is 1.12eV, then calculate the thermal equilibrium electron and hole carrier concentrations

Jul 13 2020 View more View Less

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