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An n-type silicon bar of length L is maintained under steady state conditions such that δpn0 6pno 101cm3 and δpn The Si bar is uniformly doped with N 1016/cm3 at room temperature

1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)-6pno-1012/cm3 and δpn(L)-0. The Si bar is uniformly doped with N.-1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar. a) Do low level injection conditions prevail? Explain b) Show the variation of minority carrier concentration with respect to x. c) How much is n(x)? d) What is the position of the quasi-Fermi level inside the bar at (i) x-0, and (ii) x-L? 1. An n-type silicon bar of length L is maintained under steady state conditions such that δpn(0)-6pno-1012/cm3 and δpn(L)-0. The Si bar is uniformly doped with N.-1016/cm3 at room temperature. No other photo-generation of processes occurring inside the bar. a) Do low level injection conditions prevail? Explain b) Show the variation of minority carrier concentration with respect to x. c) How much is n(x)? d) What is the position of the quasi-Fermi level inside the bar at (i) x-0, and (ii) x-L?

May 10 2020 View more View Less

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